dmc1030ufdb document number: ds36933 rev.1 - 2 1 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 n-channel 12v 34m ? @ v gs = 4.5v 5.1a 40m ? @ v gs = 2.5v 4.7a 50m ? @ v gs = 1.8v 4.2a 70m ? @ v gs = 1.5v 3.6a q2 p-channel -12v 59m ? @ v gs = -4.5v -3.9a 81m ? @ v gs = -2.5v -3.3a 115m ? @ v gs = -1.8v -2.8a 215m ? @ v gs = -1.5v -2.0a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? load switch ? power management functions ? portable power adaptors features ? low on-resistance ? low input capacitance ? low profile, 0.6mm max height ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-dfn2020-6 type b ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish nipdau over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.0065 grams (approximate) ordering information (note 4) part number case packaging dmc1030ufdb -7 u-dfn2020-6 type b 3000/tape & reel dmc1030ufdb -13 u-dfn2020-6 type b 10000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2012 2013 2014 2015 2016 2017 2018 code z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic d3 = product type marking code ym = date code marking y = year (ex: a = 2013) m = month (ex: 9 = september) s1 g1 d2 s2 g2 d1 d2 pin1 n-channel mosfet p-channel mosfet u-dfn2020-6 type b d1 esd protected d3 y m d1 s1 g1 gate protection diode d2 s2 g2 gate protection diode e4
dmc1030ufdb document number: ds36933 rev.1 - 2 2 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol q1 n-channel q2 p-channel units drain-source voltage v dss 12 -12 v gate-source voltage v gss 8 8 v continuous drain current (note 5) v gs = 4.5v steady state t a = +25c t a = +70c i d 5.1 4.1 -3.9 -3.1 a t < 5s t a = +25c t a = +70c i d 6.6 5.3 -5.0 -4.0 a maximum continuous body diode forward current (note 5) i s 2 -1.7 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 35 -25 a thermal characteristics characteristic symbol v alue units total power dissipation (note 5) steady state p d 1.36 w t < 5s 1.89 thermal resistance, junction to ambient (note 5) steady state r ja 92 c/w t < 5s 66 thermal resistance, junction to case (note 5) r jc 18 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics q1 n-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 12 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 1.0 a v ds = 12v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) 0.4 ? 1 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 17 34 m ? v gs = 4.5v, i d = 4.6a ? 20 40 v gs = 2.5v, i d = 4.2a ? 24 50 v gs = 1.8v, i d = 3.8a ? 28 70 v gs = 1.5v, i d = 1.5a diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 4.8a dynamic characteristics (note 7) input capacitance c iss ? 1003 ? pf v ds = 6v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 132 ? pf reverse transfer capacitance c rss ? 115 ? pf gate resistance r g ? 11.3 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g ? 12.2 ? nc v ds = 10v, i d = 6.8a total gate charge (v gs = 8v) ? 23.1 ? nc gate-source charge q gs ? 1.3 ? nc gate-drain charge q gd ? 1.5 ? nc turn-on delay time t d(on) ? 4.4 ? ns v dd = 6v, v gs = 4.5v, r l = 1.1 ? , r g = 1 ? turn-on rise time t r ? 7.4 ? ns turn-off delay time t d(off) ? 18.8 ? ns turn-off fall time t f ? 4.9 ? ns body diode reverse recovery time trr ? 7.6 ? ns i s = 5.4a, di/dt = 100a/ s body diode reverse recovery charge qrr ? 0.9 ? nc i s = 5.4a, di/dt = 100a/ s notes: 5. device mounted on 1? x 1? fr-4 pc b with high coverage 2oz. copper, single sided. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing.
dmc1030ufdb document number: ds36933 rev.1 - 2 3 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb v , drain-source voltage (v) figure 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d 0 2 4 6 8 10 12 14 16 18 20 00.511.522.53 v= 0.9v gs v= 1.0v gs v= 2.0v gs v= 1.8v gs vv gs = 1.5 v= 4.0v gs v= 4.5v gs v= 3.0v gs v= 3.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d 0 2 4 6 8 10 12 14 16 18 20 00.5 11.5 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 101214161820 v= 2.5v gs v = 4.5v gs v= 18v gs v = 1.5v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0.00 0.01 0.02 0.03 0.04 0 2 4 6 8 101214161820 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v= v i = 3.0a gs d 1.8 v= v i = 5.0a gs d 2.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 v= v i = 3.0a gs d 1.8 v= v i = 5.0a gs d 2.5
dmc1030ufdb document number: ds36933 rev.1 - 2 4 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1 -50-25 0 25 50 75100125150 i= 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t= 85c a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t= 125c a t = 150c a t = -55c a t= 25c a v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t an c e (pf) t 10 100 1000 10000 024681012 f = 1mhz c iss c oss c rss q(nc) g , total gate charge figure 10 gate charge v g a t e t h r es h o ld v o l t a g e (v) gs 0 2 4 6 8 0 5 10 15 20 25 v = 10v i= a ds d 6.8 v , drain-source voltage (v) figure 11 soa safe operation area ds i, d r ain c u r r en t (a) d r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c v = 4.5v single pulse j(max) a gs dut on 1 * mrp board
dmc1030ufdb document number: ds36933 rev.1 - 2 5 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb electrical characteristics q2 p-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -12 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss ? ? -1.0 a v ds = -12v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) -0.4 ? -1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) ? 37 59 m ? v gs = -4.5v, i d = -3.6a ? 48 81 v gs = -2.5v, i d = -3.1a ? 69 115 v gs = -1.8v, i d = -2.6a ? 88 215 v gs = -1.5v, i d = -0.5a diode forward voltage v sd ? -0.7 -1.2 v v gs = 0v, i s = -3.7a dynamic characteristics (note 7) input capacitance c iss ? 1028 ? pf v ds = -6v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 285 ? pf reverse transfer capacitance c rss ? 254 ? pf gate resistance r g ? 19.6 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -4.5v) q g ? 13 ? nc v ds = -10v, i d = -4.7a total gate charge (v gs = -8v) ? 20.8 ? nc gate-source charge q gs ? 1.8 ? nc gate-drain charge q gd ? 4.5 ? nc turn-on delay time t d(on) ? 5.6 ? ns v dd = -6v, v gs = -4.5v, r l = 1.6 ? , r g = 1 ? turn-on rise time t r ? 12.8 ? ns turn-off delay time t d(off) ? 30.7 ? ns turn-off fall time t f ? 25.4 ? ns body diode reverse recovery time trr ? 31.6 ? ns i s = -3.6a, di/dt = 100a/ s body diode reverse recovery charge qrr ? 7.8 ? nc i s = -3.6a, di/dt = 100a/ s notes: 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing. -v , drain -source voltage (v) figure 12 typical output characteristics ds -i , d r ai n c u r r e n t (a) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v = -0.9v gs v = -1.0v gs v = -3.5v gs v = -4.5v gs v = -4.0v gs v = -1.5v gs v = -1.8v gs v = -2.0v gs v = -3.0v gs -v , gate-source voltage (v) gs figure 13 typical transfer characteristics -i , d r ain c u r r en t (a) d 0 2 4 6 8 10 12 14 16 18 20 00.5 11.5 22.5 3 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds
dmc1030ufdb document number: ds36933 rev.1 - 2 6 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb -i , drain source current (a) figure 14 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0.001 02468101214161820 v = -2.5v gs v = -4.5v gs v = -1.8v gs v = -1.5v gs -i , drain source current (a) figure 15 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 101214161820 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v= -4.5v gs t , junction temperature ( c) j figure 16 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -1.8v i = -3.0a gs d v = -2.5v i = -5.0a gs d t , junction temperature ( c) j figure 17 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 -50 -25 0 25 50 75 100 125 150 v = -2.5v i= a gs d -5.0 v= v i= a gs d -1.8 -3.0 t , ambient temperature (c) figure 18 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d -v , source-drain voltage (v) figure 19 diode forward voltage vs. current sd -i , s o u r c e c u r r en t (a) s 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t= 85c a t = -55c a t= 25c a
dmc1030ufdb document number: ds36933 rev.1 - 2 7 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb c , j u n c t i o n c a p a c i t an c e (p f ) t -v , drain-source voltage (v) figure 20 typical junction capacitance ds 10 100 1000 10000 024681012 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 21 gate-charge characteristics g -v , g a t e-s o u r c e v o l t a g e (v) gs 0 5 10 15 20 25 v = -10v i= -4.7a ds d -v , drain-source voltage (v) figure 22 soa safe operation area ds -i , d r ai n c u r r e n t (a) d r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 t = 150c t = 25c v = -4.5v single pulse j(max) a gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t1, pulse duration times (sec) figure 23 transient thermal resistance r(t), t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 159c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.9
dmc1030ufdb document number: ds36933 rev.1 - 2 8 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. u-dfn2020-6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? 0.45 d2 0.50 0.70 0.60 e ? ? 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? 0.15 l 0.25 0.35 0.30 z ? ? 0.225 all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
dmc1030ufdb document number: ds36933 rev.1 - 2 9 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1030ufdb important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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